Strain effects in ZnO layers deposited on 6H-SiC
نویسندگان
چکیده
Correlation in crystallite sizes and defects of epitaxial ZnO layers deposited on 6H-SiC substrates has been addressed. The biaxial strain governs the ZnO crystallites for the layer thickness of 400 nm. The misfit dislocations were observed in nucleation and theater is the columnar growth mode diffracted in transmission electron microscopy. The columnar growth mode is a symbol of stacking faults that appear due to imbalanced interface chemistry in the II-VI/IV materials system, together with the complex impurity matrix. These defects are the main source of nonradiative recombination centers in ZnO epitaxy resulting in shorter exciton lifetimes examined in time-resolved photoluminescence measurements. © 2006 American Institute of Physics. DOI: 10.1063/1.2345021
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